@article{oai:naist.repo.nii.ac.jp:00009719,
 author = {Pincelli, T and Lollobrigida, V and Borgatti, F and Regoutz, A and Gobaut, B and Schlueter, C and Lee, T. -L. and Payne, D. J. and Oura, M and Tamasaku, K and Petrov, A. Y. and Graziosi, P. and Granozio, F. Miletto and Cavallini, M. and Vinai, G. and Ciprian, R. and Back, C. H. and Rossi, G. and Taguchi, Munetaka and Daimon, Hiroshi and van der Laan,  G and Panaccione, G},
 journal = {Nature Communications},
 month = {Jul},
 note = {In the rapidly growing field of spintronics, simultaneous control of electronic and magnetic properties is essential, and the perspective of building novel phases is directly linked to the control of tuning parameters, for example, thickness and doping. Looking at the relevant effects in interface-driven spintronics, the reduced symmetry at a surface and interface corresponds to a severe modification of the overlap of electron orbitals, that is, to a change of electron hybridization. Here we report a chemically and magnetically sensitive depth-dependent analysis of two paradigmatic systems, namely La1-xSrxMnO3 and (Ga,Mn)As. Supported by cluster calculations, we find a crossover between surface and bulk in the electron hybridization/correlation and we identify a spectroscopic fingerprint of bulk metallic character and ferromagnetism versus depth. The critical thickness and the gradient of hybridization are measured, setting an intrinsic limit of 3 and 10 unit cells from the surface, respectively, for (Ga,Mn)As and La1-xSrxMnO3, for fully restoring bulk properties.},
 title = {Quantifying the critical thickness of electron hybridization in spintronics materials},
 volume = {8},
 year = {2017}
}