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  1. 04 物質創成科学
  2. 01 学術雑誌論文

Variable frequency and quantitative capacitance measurements in dual bias modulation electrostatic force microscopy

http://hdl.handle.net/10061/0002001269
http://hdl.handle.net/10061/0002001269
0a12d129-14a8-439b-b310-18caaff588d0
名前 / ファイル ライセンス アクション
paper_jjap-s1104546_acceptedmanu_20250613_113404_7a.pdf fulltext (1.3 MB)
 Download is available from 2026/6/9.
アイテムタイプ 学術雑誌論文 / Journal Article(1)
公開日 2025-11-10
日付
日付 2026-06-09
日付タイプ Available
タイトル
タイトル Variable frequency and quantitative capacitance measurements in dual bias modulation electrostatic force microscopy
言語
言語 eng
資源タイプ
資源タイプ review article
アクセス権
アクセス権 embargoed access
著者 福澤, 亮太

× 福澤, 亮太

ja 福澤, 亮太

ja-Kana フクザワ, リョウタ

en Fukuzawa, Ryota

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Takahashi, Takuji

× Takahashi, Takuji

en Takahashi, Takuji

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抄録
内容記述タイプ Abstract
内容記述 Electrostatic force microscopy (EFM) has been used to investigate the local electronic properties of materials, although frequency response and quantitative capacitance measurements are difficult in conventional EFM because of its narrow measurement bandwidth and insufficient quantitativity. In this paper, we introduce dual bias modulation EFM (DEFM) as a method for achieving variable frequency measurements and quantitative capacitance analysis. Dual bias modulation technique enables independent control of a frequency pair (ω1, ω2) for electrical modulation while a differential frequency, such as ω2 − ω1 and/or ω2 − 2ω1, is kept constant, and this frequency component in the electrostatic force is extracted. We confirmed the effectiveness of DEFM through experiments on Si and Cu(In,Ga)Se2 solar cell materials, where clear frequency responses were observed. Furthermore, the quantitative analysis of capacitance between a tip and sample in DEFM was validated by comparing carrier density values estimated from surface depletion capacitance with those from conventional Hall effect measurements. These results reveal that DEFM is an effective technique for analyzing local defects in semiconductors.
書誌情報 en : Japanese Journal of Applied Physics

巻 64, 号 6, ページ数 10, 発行日 2025-06-09
出版者
出版者 IOP Publishing
ISSN
収録物識別子タイプ EISSN
収録物識別子 1347-4065
出版者版DOI
関連タイプ isVersionOf
識別子タイプ DOI
関連識別子 https://doi.org/10.35848/1347-4065/addad0
出版者版URI
関連タイプ isVersionOf
識別子タイプ URI
関連識別子 https://iopscience.iop.org/article/10.35848/1347-4065/addad0
権利
権利情報Resource https://creativecommons.org/licenses/by-nc-nd/4.0/
権利情報 © 2025 The Japan Society of Applied Physics. All rights, including for text and data mining, AI training, and similar technologies, are reserved. This is the Accepted Manuscript version of an article accepted for publication in Japanese Journal of Applied Physics. IOP Publishing Ltd is not responsible for any errors or omissions in this version of the manuscript or any version derived from it. The Version of Record is available online at https://doi.org/10.35848/1347-4065/addad0 . This Accepted Manuscript is available for reuse under a CC BY-NC-ND licence after the 12 month embargo period provided that all the terms of the licence are adhered to. 出版社許諾条件により、本文は2026年6月9日以降に公開。
著者版フラグ
出版タイプ AM
助成情報
助成機関名 Japan Society for the Promotion of Science (JSPS)
研究課題番号 JP17H02783
研究課題番号URI https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-17H02783/
研究課題名 光援用ナノプローブによる多元系半導体太陽電池中の光励起キャリアダイナミクスの解明
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