| アイテムタイプ |
学術雑誌論文 / Journal Article(1) |
| 公開日 |
2025-09-25 |
| タイトル |
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タイトル |
Ternary amorphous oxide semiconductor of In–Ga–O system for three-dimensional integrated device application |
| 言語 |
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言語 |
eng |
| 資源タイプ |
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資源タイプ |
journal article |
| アクセス権 |
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アクセス権 |
open access |
| 著者 |
高橋, 崇典
Uenuma, Mutsunori
Kobayashi, Masaharu
浦岡, 行治
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| 抄録 |
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内容記述タイプ |
Abstract |
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内容記述 |
In2O3-based oxide semiconductors are potential materials for supporting the development of next-generation integrated devices with low power consumption, such as back-end-of-line-compatible transistors and ferroelectric memories. Currently, these are standard semiconductor materials used in display research and industrial fields; however, their physical properties and functions must be optimized and reviewed to accelerate integrated device applications. This study proposed a concept for developing thermally stable amorphous oxide semiconductor materials for three-dimensional ferroelectric memory applications. We focused on ternary amorphous oxide semiconductors in terms of the atomic layer deposition process, thermal stability of the amorphous phase, and electrical properties. The electrical properties of ternary In–X–O (X = Al, Ga, Zn, or Sn) in a thin-film transistor fabricated using a high-temperature process were evaluated and compared. A ternary In–Ga–O system satisfied the stability of mobility over 20 cm2/Vs and threshold voltage close to 0 V under high temperature annealing up to 600 °C, which implies compatibility with HfO2-based ferroelectric device applications. The designed amorphous In–Ga–O induced a ferroelectric phase of Zr-doped HfO2 and exhibited sufficient semiconducting properties even after annealing at 500 °C in an N2 atmosphere. In addition, we developed an atomic layer deposition process for fabricating In–Ga–O. The atomic-layer-deposited In–Ga–O channel exhibited thermal stability, field-effect mobility over 20 cm2/Vs, and a subthreshold swing below 80 mV/decade, which was nearly identical to that of the sputter-deposited channel. The ternary In–Ga–O can be considered a potential material for future memory applications. This study provides a unique perspective on the design of oxide semiconductor materials for integrated devices. |
| 書誌情報 |
en : APM Materials
巻 13,
号 5,
発行日 2025-05-01
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| 出版者 |
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出版者 |
AIP Publishing |
| ISSN |
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収録物識別子タイプ |
EISSN |
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収録物識別子 |
2166-532X |
| 出版者版DOI |
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関連タイプ |
isReplacedBy |
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識別子タイプ |
DOI |
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関連識別子 |
https://doi.org/10.1063/5.0243670 |
| 出版者版URI |
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関連タイプ |
isReplacedBy |
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識別子タイプ |
URI |
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関連識別子 |
https://pubs.aip.org/aip/apm/article/13/5/051101/3345542 |
| 権利 |
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権利情報Resource |
https://creativecommons.org/licenses/by/4.0/ |
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権利情報 |
© 2025 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution (CC BY) license (https://creativecommons.org/licenses/by/4.0/). |
| 著者版フラグ |
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出版タイプ |
NA |
| 助成情報 |
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助成機関名 |
Japan Science and Technology Agency (JST) |
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研究課題番号 |
JPMJCR23A3 |
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研究課題番号URI |
https://projectdb.jst.go.jp/grant/JST-PROJECT-23830112/ |
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研究課題名 |
三次元集積メモリデバイスに向けたナノシート酸化物半導体 |
| 助成情報 |
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助成機関名 |
Japan Society for the Promotion of Science (JSPS) |
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研究課題番号 |
23K23226 |
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研究課題番号URI |
https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-23K23226/ |
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研究課題名 |
高性能三次元素子を目指したALD法による金属酸化物半導体の薄膜形成技術の研究 |
| 助成情報 |
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助成機関名 |
Japan Society for the Promotion of Science (JSPS) |
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研究課題番号 |
23K19123 |
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研究課題番号URI |
https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-23K19123/ |
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研究課題名 |
原子層プロセスによる結晶性酸化物半導体の高品位な合成と集積デバイス応用 |
