| アイテムタイプ |
学術雑誌論文 / Journal Article(1) |
| 公開日 |
2025-07-11 |
| タイトル |
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タイトル |
Spectroscopic Analysis of Electrical Phenomena and Oxygen Vacancy Generation for Self-Aligned Fully Solution-Processed Oxide Thin-Film Transistors |
| 言語 |
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言語 |
eng |
| キーワード |
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主題Scheme |
Other |
|
主題 |
spectroscopic analysis |
| キーワード |
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主題Scheme |
Other |
|
主題 |
oxygen vacancy |
| キーワード |
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主題Scheme |
Other |
|
主題 |
Ar inductively coupled plasma |
| キーワード |
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主題Scheme |
Other |
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主題 |
energy band diagram |
| キーワード |
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主題Scheme |
Other |
|
主題 |
extended X-ray absorption fine structure |
| キーワード |
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主題Scheme |
Other |
|
主題 |
ultraviolet photoelectron spectroscopy |
| キーワード |
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主題Scheme |
Other |
|
主題 |
amorphous indium zinc oxide |
| 資源タイプ |
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資源タイプ |
journal article |
| アクセス権 |
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アクセス権 |
open access |
| 著者 |
Auewattanapun, Krittin
Bermundo, Juan Paolo S.
Hanifah, Umu
Nakajima, Hideki
Limphirat, Wanwisa
Techapiesancharoenkij, Ratchatee
浦岡, 行治
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| 抄録 |
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内容記述タイプ |
Abstract |
|
内容記述 |
This work unveils critical insights through spectroscopic analysis highlighting electrical phenomena and oxygen vacancy generation in self-aligned fully solution-processed oxide thin-film transistors (TFTs). Ar inductively coupled plasma treatment was conducted to fabricate an amorphous indium zinc oxide (a-InZnO) TFT in a self-aligned process. Results showed that the Ar plasma-activated a-InZnO regions became conductive, which means that a homogeneous layer can act as both channel and electrode in the device. Several techniques were employed to probe specific aspects of the source$2013drain$2013channel interface in the fully solution-processed TFTs. X-ray absorption near-edge structure and Extended X-ray absorption fine structure were conducted to investigate the existence of oxygen vacancies, which is the main driving factor in inducing a conductive region. X-ray photoelectron spectroscopy was also used to explain the oxygen refilling mechanism. Ultraviolet Photoelectron Spectroscopy was conducted to analyze the valence band maximum and work function. Integration of these results facilitated the construction of the energy band diagram at the interface, wherein a Schottky barrier height of $223C0.37 eV was observed. By leveraging these techniques, insights into the electronic properties and performance of next-generation transistors are gained, enabling their future widespread adoption. |
| 書誌情報 |
en : ACS Applied Materials & Interfaces
巻 16,
号 44,
p. 60521-60529,
ページ数 9,
発行日 2024-11-06
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| 出版者 |
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出版者 |
American Chemical Society |
| ISSN |
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収録物識別子タイプ |
EISSN |
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収録物識別子 |
1944-8252 |
| 出版者版DOI |
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関連タイプ |
isReplacedBy |
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識別子タイプ |
DOI |
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関連識別子 |
https://doi.org/10.1021/acsami.4c13142 |
| 出版者版URI |
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関連タイプ |
isReplacedBy |
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識別子タイプ |
URI |
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関連識別子 |
https://pubs.acs.org/doi/full/10.1021/acsami.4c13142 |
| 権利 |
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権利情報Resource |
https://creativecommons.org/licenses/by-nc-nd/4.0/ |
|
権利情報 |
Copyright $00A9 2024 The Authors. This publication is licensed under CC-BY-NC-ND 4.0 . |
| 著者版フラグ |
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出版タイプ |
NA |
| 助成情報 |
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助成機関名 |
Kasetsart University |
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研究課題名 |
International Collaborative Education Program for Material Technology, Education, and Research (ICE-Matter) |
