| アイテムタイプ |
学術雑誌論文 / Journal Article(1) |
| 公開日 |
2025-07-01 |
| タイトル |
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|
タイトル |
Absolute evaluation of internal and external quantum efficiencies and light extraction efficiency in InGaN single quantum wells by simultaneous photoacoustic and photoluminescence measurements combined with integrating-sphere method |
| 言語 |
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言語 |
eng |
| キーワード |
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主題Scheme |
Other |
|
主題 |
InGaN quantum well |
| キーワード |
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主題Scheme |
Other |
|
主題 |
internal quantum efficiency |
| キーワード |
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主題Scheme |
Other |
|
主題 |
photoluminescence |
| キーワード |
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主題Scheme |
Other |
|
主題 |
photoacoustic |
| 資源タイプ |
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資源タイプ |
journal article |
| アクセス権 |
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アクセス権 |
open access |
| 著者 |
Mori-Tamamura, Keito
Takahashi, Yuchi
Sakai, Shigeta
Morimoto, Yuya
Hirama, Junji
Yamaguchi, Atsushi A.
Kusanagi, Susumu
Kanitani, Yuya
Kudo, Yoshihiro
冨谷, 茂隆
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| 抄録 |
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内容記述タイプ |
Abstract |
|
内容記述 |
Separated evaluation of factors in the external quantum efficiency (EQE) is important in order to improve the characteristics of semiconductors optical devices. Especially, the internal quantum efficiency (IQE) is an important value which indicates crystal quality of the active layers, and an accurate method for estimating the IQE values is required. The IQE is usually estimated from temperature dependence of photoluminescence (PL) intensity by assuming that the IQE at cryogenic temperature is 100%. However, III-nitride semiconductor materials, used in many optical devices, usually have large defect density, and the assumption is not necessarily valid. In our previous report, we demonstrated the simultaneous photoacoustic (PA) and PL measurements to accurately estimate the IQE values in GaN films with various qualities and obtained reasonable results. In this work, we have successfully realized reproducible measurements with high accuracy for an InGaN-QW sample by suppressing the background noise significantly. Furthermore, we have also measured the values of EQE by using an integrating-sphere. Since the light extraction efficiency (LEE) can be obtained by the values of IQE and EQE, it has been shown that the overall picture of emission efficiency can be provided by our method. |
| 書誌情報 |
en : Science and Technology of Advanced Materials: Methods
巻 4,
号 1,
発行日 2024-02-14
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| 出版者 |
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出版者 |
Taylor and Francis |
| ISSN |
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収録物識別子タイプ |
EISSN |
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収録物識別子 |
2766-0400 |
| 出版者版DOI |
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関連タイプ |
isReplacedBy |
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識別子タイプ |
DOI |
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関連識別子 |
https://doi.org/10.1080/27660400.2024.2315027 |
| 出版者版URI |
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関連タイプ |
isReplacedBy |
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識別子タイプ |
URI |
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関連識別子 |
https://www.tandfonline.com/doi/full/10.1080/27660400.2024.2315027 |
| 権利 |
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権利情報Resource |
https://creativecommons.org/licenses/by/4.0/ |
|
権利情報 |
$00A9 2024 The Author(s). Published by National Institute for Materials Science in partnership with Taylor & Francis Group. This is an Open Access article distributed under the terms of the Creative Commons Attribution License (http://creativecommons.org/licenses/by/4.0/), which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited. The terms on which this article has been published allow the posting of the Accepted Manuscript in a repository by the author(s) or with their consent. |
| 著者版フラグ |
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出版タイプ |
NA |
| 助成情報 |
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助成機関名 |
Japan Society for the Promotion of Science (JSPS) |
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研究課題番号 |
JP19H04553 |
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研究課題名 |
輻射・非輻射再結合の同時観測とそれに基づく特異構造の電子状態の理論モデル構築 |
