| アイテムタイプ |
学術雑誌論文 / Journal Article(1) |
| 公開日 |
2025-06-30 |
| タイトル |
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タイトル |
Impact of crystallinity on thermal conductivity of RF magnetron sputtered MoS2 thin films |
| 言語 |
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言語 |
eng |
| 資源タイプ |
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資源タイプ |
journal article |
| アクセス権 |
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アクセス権 |
open access |
| 著者 |
Kitazawa, Tatsuya
Inaba, Yuta
Yamashita, Shunsuke
Imai, Shinya
Kurohara, Keita
Tatsumi, Tetsuya
Wakabayashi, Hitoshi
冨谷, 茂隆
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| 抄録 |
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内容記述タイプ |
Abstract |
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内容記述 |
This study investigates the effects of sulfur atomic defects and crystallinity on the thermal conductivity of MoS2 thin films. Utilizing scanning transmission electron microscopy (STEM), X-ray diffraction (XRD), and Raman spectroscopy, we examined MoS2 films, several nanometers thick, deposited on Si/SiO2 substrates. These films were prepared via a combination of RF magnetron sputtering and sulfur vapor annealing (SVA) treatment. Structural analyses, including cross-sectional STEM and in-plane and out-of-plane XRD measurements, revealed an increase in the S/Mo ratio and grain size of the MoS2 films following SVA treatment. Notably, the in-plane thermal conductivity of MoS2 films treated with SVA was found to be at least an order of magnitude higher than that of films without SVA treatment. This research suggests that the in-plane thermal conductivity of MoS2 thin films can be significantly enhanced through crystallinity improvement via SVA treatment. |
| 書誌情報 |
en : Japanese Journal of Applied Physics
巻 63,
号 5,
p. 055508-1-055508-8,
発行日 2024-05-24
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| 出版者 |
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出版者 |
IOP Publishing |
| ISSN |
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収録物識別子タイプ |
EISSN |
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収録物識別子 |
1347-4065 |
| 出版者版DOI |
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関連タイプ |
isReplacedBy |
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識別子タイプ |
DOI |
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関連識別子 |
https://doi.org/10.35848/1347-4065/ad46ae |
| 出版者版URI |
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関連タイプ |
isReplacedBy |
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識別子タイプ |
URI |
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関連識別子 |
https://iopscience.iop.org/article/10.35848/1347-4065/ad46ae |
| 権利 |
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権利情報Resource |
https://creativecommons.org/licenses/by/4.0/ |
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権利情報 |
$00A9 2024 The Author(s). Published on behalf of The Japan Society of Applied Physics by IOP Publishing Ltd. Content from this work may be used under the terms of the Creative Commons Attribution 4.0 license. Any further distribution of this
work must maintain attribution to the author(s) and the title of the work, journal citation and DOI. |
| 著者版フラグ |
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出版タイプ |
NA |
| 助成情報 |
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助成機関名 |
Sony Group Corporation |
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研究課題名 |
Collaborative Research Chair/Division Program |
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助成機関名 |
Ministry of Education, Culture, Sports, Science and Technology(MEXT) |
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研究課題番号 |
JPJ011438 |
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研究課題名 |
Initiative to Establish Next-generation Novel Integrated Circuits Centers (X-NICS) |
| 助成情報 |
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助成機関名 |
Japan Society for the Promotion of Science (JSPS) |
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研究課題番号 |
20H05880 |
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研究課題名 |
社会実装に向けた超秩序構造物質ライブラリーに基づく合成プロセス開発 |
| 助成情報 |
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助成機関名 |
Japan Society for the Promotion of Science (JSPS) |
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研究課題番号 |
22K04181 |
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研究課題名 |
遷移金属ダイカルコゲナイド薄膜の成膜機構と熱電変換特性因子の解明 |
