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Dual Role of AgNO3 as an Oxidizer and Chloride Remover toward Enhanced Combustion Synthesis of Low-Voltage and Low-Temperature Amorphous Rare Metal-Free Oxide Thin-Film Transistors
http://hdl.handle.net/10061/0002000670
http://hdl.handle.net/10061/000200067085f155f6-5c84-42f2-9baa-b1cdb5c2df90
| アイテムタイプ | 学術雑誌論文 / Journal Article(1) | |||||||||
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| 公開日 | 2024-11-19 | |||||||||
| タイトル | ||||||||||
| タイトル | Dual Role of AgNO3 as an Oxidizer and Chloride Remover toward Enhanced Combustion Synthesis of Low-Voltage and Low-Temperature Amorphous Rare Metal-Free Oxide Thin-Film Transistors | |||||||||
| 言語 | ||||||||||
| 言語 | eng | |||||||||
| キーワード | ||||||||||
| 主題Scheme | Other | |||||||||
| 主題 | oxide semiconductor | |||||||||
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| 主題Scheme | Other | |||||||||
| 主題 | combustion synthesis | |||||||||
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| 主題Scheme | Other | |||||||||
| 主題 | tin oxide | |||||||||
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| 主題Scheme | Other | |||||||||
| 主題 | low-temperature fabrication | |||||||||
| キーワード | ||||||||||
| 主題Scheme | Other | |||||||||
| 主題 | rare-metal-free | |||||||||
| キーワード | ||||||||||
| 主題Scheme | Other | |||||||||
| 主題 | TFT chloride remover | |||||||||
| 資源タイプ | ||||||||||
| 資源タイプ | journal article | |||||||||
| アクセス権 | ||||||||||
| アクセス権 | open access | |||||||||
| 著者 |
Quino, Candell Grace P.
× Quino, Candell Grace P.
× Bermundo, Juan Paolo× Kawanishi, Hidenori
× 浦岡, 行治 |
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| 抄録 | ||||||||||
| 内容記述タイプ | Abstract | |||||||||
| 内容記述 | SnO2 transistors show great promise as an alternative to existing In2O3-based transistors, considering their abundance and similar electronic properties. However, they suffer from highly negative on-voltages, large subthreshold swings, and high processing temperatures. One of the reasons for this is the residual chloride in the SnO2 film, which negatively impacts the transistor by increasing the defects or acting as a dopant, thereby shifting the turn-on voltage negatively and increasing the subthreshold swing. Herein, we present a facile method of producing SixSnyO films with fewer chloride impurities, which can be used in high-performance, solution-processed TFTs. We employed AgNO3 as an oxidizer for a low-temperature combustion reaction at 300 °C, which simultaneously acts as a chloride remover. We successfully reduced the turn-on voltage from $221235.0 to $22120.7 V using this route. The subthreshold swing was decreased from 2.91 to 0.32 V/dec using the same Sn concentration. The highest mobility obtained was 1.92 cm2/(V s) from the 0.25 M Sn precursor at a low drain voltage of 0.1 V. This method can be used as a general route for fabricating solution process-based SnO2 TFTs and further expanding its application to flexible devices via low-temperature combustion. | |||||||||
| 書誌情報 |
en : ACS Applied Electronic Materials 巻 6, 号 1, p. 505-513, 発行日 2024-01-09 |
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| 出版者 | ||||||||||
| 出版者 | American Chemical Society | |||||||||
| ISSN | ||||||||||
| 収録物識別子タイプ | EISSN | |||||||||
| 収録物識別子 | 2637-6113 | |||||||||
| 出版者版DOI | ||||||||||
| 関連タイプ | isReplacedBy | |||||||||
| 識別子タイプ | DOI | |||||||||
| 関連識別子 | https://doi.org/10.1021/acsaelm.3c01479 | |||||||||
| 出版者版URI | ||||||||||
| 関連タイプ | isReplacedBy | |||||||||
| 識別子タイプ | URI | |||||||||
| 関連識別子 | https://pubs.acs.org/doi/10.1021/acsaelm.3c01479 | |||||||||
| 権利 | ||||||||||
| 権利情報Resource | https://creativecommons.org/licenses/by/4.0/ | |||||||||
| 権利情報 | $00A9 2024 The Authors. Published by American Chemical Society. This publication is licensed under CC-BY 4.0 . | |||||||||
| 著者版フラグ | ||||||||||
| 出版タイプ | NA | |||||||||
