| アイテムタイプ |
学術雑誌論文 / Journal Article(1) |
| 公開日 |
2024-07-03 |
| タイトル |
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タイトル |
High-k Solution-Processed Barium Titanate/Polysiloxane Nanocomposite for Low-Temperature Ferroelectric Thin-Film Transistors |
| 言語 |
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言語 |
eng |
| 資源タイプ |
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資源タイプ |
journal article |
| アクセス権 |
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アクセス権 |
open access |
| 著者 |
Safaruddin, Aimi Syairah
Bermundo, Juan Paolo
Wu, Chuanjun
上沼, 睦典
Yamamoto, Atsuko
Kimura, Mutsumi
浦岡, 行治
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| 抄録 |
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内容記述タイプ |
Abstract |
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内容記述 |
Ferroelectric nanoparticles have attracted much attention for numerous electronic applications owing to their nanoscale structure and size-dependent behavior. Barium titanate (BTO) nanoparticles with two different sizes (20 and 100 nm) were synthesized and mixed with a polysiloxane (PSX) polymer forming a nanocomposite solution for high-k nanodielectric films. Transition from the ferroelectric to paraelectric phase of BTO with different nanoparticle dimensions was evaluated through variable-temperature X-ray diffraction measurement accompanied by electrical analysis using capacitor structures. A symmetric single 200 peak was constantly detected at different measurement temperatures for the 20 nm BTO sample, marking a stable cubic crystal structure. 100 nm BTO on the other hand shows splitting of 200/002 peaks correlating to a tetragonal crystal form which further merged, thus forming a single 200 peak at higher temperatures. Smaller BTO dimension exhibits clockwise hysteresis in capacitance$2013voltage measurement and correlates to a cubic crystal structure which possesses paraelectric properties. Bigger BTO dimension in contrast, demonstrates counterclockwise hysteresis owing to their tetragonal crystal form. Through further Rietveld refinement analysis, we found that the tetragonality (c/a) of 100 nm BTO decreases at a higher temperature which narrows the hysteresis window. A wider hysteresis window was observed when utilizing 100 nm BTO compared to 20 nm BTO even at a lower loading ratio. The present findings imply different hysteresis mechanisms for BTO nanoparticles with varying dimensions which is crucial in understanding the role of how the BTO size tunes the crystal structures for integration in thin-film transistor devices. |
| 書誌情報 |
en : ACS Omega
巻 8,
号 33,
p. 29939-29948,
発行日 2023-08-09
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| 出版者 |
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出版者 |
American Chemical Society |
| ISSN |
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収録物識別子タイプ |
EISSN |
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収録物識別子 |
2470-1343 |
| 出版者版DOI |
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関連タイプ |
isReplacedBy |
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識別子タイプ |
DOI |
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関連識別子 |
https://doi.org/10.1021/acsomega.2c08142 |
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関連タイプ |
isReplacedBy |
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識別子タイプ |
URI |
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関連識別子 |
https://pubs.acs.org/doi/10.1021/acsomega.2c08142 |
| 権利 |
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権利情報Resource |
https://creativecommons.org/licenses/by/4.0/ |
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権利情報 |
Copyright $00A9 2023 The Authors. Published by American Chemical Society. This publication is licensed under CC-BY 4.0. |
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出版タイプ |
NA |
