| アイテムタイプ |
学術雑誌論文 / Journal Article(1) |
| 公開日 |
2024-07-03 |
| タイトル |
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タイトル |
High gain complementary inverters based on comparably-sized IGZO and DNTT source-gated transistors |
| 言語 |
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言語 |
eng |
| 資源タイプ |
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資源タイプ |
journal article |
| アクセス権 |
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アクセス権 |
open access |
| 著者 |
Bestelink, Eva
Sihapitak, Pongsakorn
Zschieschang, Ute
Askew, Leslie
Shannon, John M.
Bermundo, Juan Paolo
浦岡, 行治
Klauk, Hagen
Sporea, Radu A.
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| 抄録 |
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内容記述タイプ |
Abstract |
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内容記述 |
We report the first implementation of a complementary circuit using thin-film source-gated transistors (SGTs). The n-channel and p-channel SGTs were fabricated using the inorganic and organic semiconductors amorphous InGaZnO (IGZO) and dinaphtho[2,3-b:2′,3′-f]thieno[3,2-b]thiophene (DNTT), respectively. The SGTs exhibit flat output characteristics and early saturation (dVDSAT/dVGS = 0.2 and 0.3, respectively), even in the absence of lateral field-relief structures, thanks to the rectifying source contacts realized with Pt and Ni, respectively. Hence, the complementary inverter shows excellent small-signal gain of 368 V V$22121 and noise margin exceeding 94% of the theoretical maximum. We show that the trip point of such inverters can be tuned optically, with interesting applications in compact detectors and sensors. Numerical simulation, using Silvaco ATLAS, reveals that optimized and monolithically-integrated SGT-based complementary inverters may reach a small-signal gain over 9000 V V$22121, making them highly suited to low and moderate speed digital thin-film applications. This proof-of-concept demonstration provides encouraging results for further integration and circuit level optimizations. |
| 書誌情報 |
en : Journal of Materials Chemistry C
巻 11,
号 34,
p. 11688-11696,
発行日 2023-08-08
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| 出版者 |
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出版者 |
Royal Society of Chemistry |
| ISSN |
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収録物識別子タイプ |
EISSN |
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収録物識別子 |
2050-7534 |
| 出版者版DOI |
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関連タイプ |
isReplacedBy |
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識別子タイプ |
DOI |
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関連識別子 |
https://doi.org/10.1039/D3TC02474A |
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関連タイプ |
isReplacedBy |
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識別子タイプ |
URI |
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関連識別子 |
https://pubs.rsc.org/en/content/articlelanding/2023/tc/d3tc02474a |
| 権利 |
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権利情報Resource |
http://creativecommons.org/licenses/by/3.0/ |
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権利情報 |
This journal is $00A9 The Royal Society of Chemistry 2023 This article is licensed under a Creative Commons Attribution 3.0 Unported Licence. |
| 著者版フラグ |
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出版タイプ |
NA |
